2N4401 Ver la hoja de datos (PDF) - Weitron Technology

Número de pieza

componentes Descripción

Fabricante

2N4401

NPN Silicon General Purpose Transistors

Weitron Technology 

NPN Silicon General Purpose Transistors

2N4401

TO-92

FEATURES

Power dissipation

PCM : 0.625 W

Collector current

ICM: 0.6 A

Collector-base voltage

V(BR)CBO : 60

V

（Tamb=25℃）

Operating and storage junction temperature range

TJ，Tstg: -55℃ to +150℃

1

1. EMITTER

2. BASE

2

3

3. COLLECTOR

ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）

Parameter

Symbol Test conditions

MIN

MAX UNIT

Collector-base breakdown voltage

V(BR)CBO Ic=100μA , IE=0

60

V

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Collector cut-off current

Emitter cut-off current

V(BR)CEO IC= 1mA , IB=0

V(BR)EBO IE=100μA, IC=0

ICBO

VCB=50 V , IE=0

ICEO

VCE=35 V , IB=0

IEBO

VEB=5V , IC=0

40

V

6

　　V

0.1 　μA

0.1 　μA

0.1 　μA

DC current gain

hFE（1） VCE=1 V, IC= 150m A

100 300

Collector-emitter saturation voltage

VCE(sat)

IC=150 mA, IB=15m A

0.4

V

Base-emitter saturation voltage

Transition frequency

VBE(sat)

fT

IC= 150 mA, IB=15m A

VCE= 10V, IC= 20mA

f = 100MHz

0.95

V

250

MHz

WEITRON

http://www.weitron.com.tw

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