2N7000-GP013 Ver la hoja de datos (PDF) - Microchip Technology
Número de pieza
componentes Descripción
Fabricante
2N7000-GP013 Datasheet PDF : 5 Pages
| |||
Thermal Characteristics
Package
ID
(continuous)†
TO-92
200mA
Notes:
† ID (continuous) is limited by max rated Tj.
ID
(pulsed)
500mA
Power Dissipation
@TC = 25OC
1.0W
IDR†
200mA
2N7000
IDRM
500mA
Electrical Characteristics (TA = 25°C unless otherwise specified)
Sym Parameter
Min Typ Max
Units Conditions
BVDSS Drain-to-Source breakdown voltage
60
-
-
V
VGS = 0V, ID = 10µA
VGS(th) Gate threshold voltage
0.8
-
3.0
V
VGS = VDS, ID = 1.0mA
IGSS
Gate body leakage current
-
-
10
nA VGS = ±15V, VDS = 0V
IDSS
Zero Gate voltage drain current
-
-
1.0
µA VGS = 0V, VDS = 48V
-
-
1.0
mA
VGS = 0V, VDS = 48V,
TA = 125OC
ID(ON) On-state drain current
75
-
-
mA VGS = 4.5V, VDS = 10V
RDS(ON)
Static Drain-to-Source
on-state resistance
-
-
5.3
Ω
VGS = 4.5V, ID = 75mA
-
-
5.0
VGS = 10V, ID = 500mA
GFS
Forward transconductance
100
-
-
mmho VDS = 10V, ID = 200mA
CISS
COSS
CRSS
Input capacitance
Common Source output capacitance
Reverse transfer capacitance
-
-
60
-
-
25
pF
VGS = 0V, VDS = 25V,
f = 1.0MHz
-
-
5
t(ON)
t(OFF)
Turn-on time
Turn-off time
-
-
-
-
10
10
ns
VDD = 15V, ID = 500mA,
RGEN = 25Ω
VSD
Diode forward voltage drop
-
0.85
-
V
VGS = 0V, ISD = 200mA
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
INPUT
10%
0V
t(ON)
90%
t(OFF)
td(ON)
tr
td(OFF)
tf
VDD
OUTPUT
0V
10%
90%
10%
90%
Pulse
Generator
RGEN
INPUT
VDD
RL
OUTPUT
D.U.T.
Doc.# DSFP-2N7000
C0628213
Supertex inc.
2
www.supertex.com
Share Link: 