IXKP13N60C5M Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXKP13N60C5M Datasheet PDF : 4 Pages
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IXKP 13N60C5M
1.8
1.6
VDS = 5 V
5.5 V
1.4
TJV = 150°C
1.2
1
0.8
0.6
6V
7V
6.5 V
10 V
1
ID = 6.6 A
VGS = 10 V
0.8
0.6
0.4
98 %
typ
0.4
0.2
0
0
5
10
15
20
25
I D [A]
Fig. 4 Typ. drain-source on-state
resistance characteristics of IGBT
0.2
0
-60 -20
20
60
100 140 180
T j [°C]
Fig. 5 Drain-source on-state resistance
10 2
25 °C, 98%
10 1
25 °C
TJ = 150 °C
150 °C, 98%
10 0
10 -1
0
0.5
1
1.5
2
V SD [V]
Fig. 7 Forward characteristic
of reverse diode
10
ID = 6.6 A pulsed
9
8
VDS = 120 V
7
6
5
4
3
2
1
0
0
5
10
15
20
25
Q gate [nC]
Fig. 8 Typ. gate charge
300
ID = 4.4 A
700
ID = 0.25 mA
50
VDS > 2·RDS(on) max · ID
40
25 °C
30
20
TJ =150 °C
10
0
0
2
4
6
8
10
V GS [V]
Fig. 6 Typ. transfer characteristics
10 5
VGS = 0 V
f = 1 MHz
10 4
Ciss
10 3
10 2
Coss
10 1
Crss
10 0
0
100
200
300
400
500
V DS [V]
Fig. 9 Typ. capacitances
10 1
660
200
620
100
580
10 0 0.5
0.2
0.1
0.05
10 -1 0.02
0.01
single pulse
D = tp/T
0
540
10 -2
20
60
100
140
180
-60
-20
20
60 100 140 180
10 -5
10 -4
10 -3
10 -2
10 -1
10 0
T j [°C]
T j [°C]
t p [s]
Fig. 10 Avalanche energy
Fig. 11 Drain-source breakdown voltage
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