2SD880(2015) Ver la hoja de datos (PDF) - Unisonic Technologies

Número de pieza

componentes Descripción

Fabricante

2SD880
(Rev.:2015)

NPN EPITAXIAL TRANSISTOR

Unisonic Technologies 

2SD880

NPN SILICON TRANSISTOR

 ABSOLUTE MAXIMUM RATINGS (TA =25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector to Base Voltage

VCBO

60

V

Collector to Emitter Voltage

VCEO

60

V

Emitter to Base Voltage

VEBO

7

V

Collector Current

IC

3

A

Base Current

IB

0.5

A

SOT-89

TO-220 TA=25

Power Dissipation

SOT-89

PD

TO-220 TC=25

0.55

1.5

W

3

30

Junction Temperature

TJ

150

W

Storage Temperature

TSTG

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)

PARAMETER

Collector-Emitter Breakdown Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

DC Current Gain

Current gain bandwidth product

SYMBOL

BVCEO

ICBO

IEBO

VCE(SAT)

VBE(ON)

hFE

fT

TEST CONDITIONS

IC=50mA, IE=0

VCB=60V, IE=0

VEB=7V, IC=0

IC=3A, IB=300mA

VCE=5V, IC=500mA

IC=500mA, VCE=5V

VCE=5V, IC=500mA

MIN TYP MAX UNIT

60

V

100 µA

100 µA

1

V

1

V

100

200

3

MHZ

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R203-013.G

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