Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
í•œêµì–´
日本語
руÑÑкий
简体ä¸æ–‡
español
Número de pieza
componentes Descripción
IPS10N03LA(2004) Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
IPS10N03LA
(Rev.:2004)
OptiMOS®2 Power-Transistor
Infineon Technologies
IPS10N03LA Datasheet PDF : 11 Pages
1
2
3
4
5
6
7
8
9
10
Parameter
Symbol Conditions
IPD10N03LA IPF10N03LA
IPS10N03LA IPU10N03LA
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
iss
-
C
oss
V
GS
=0 V,
V
DS
=15 V,
-
C
rss
f
=1 MHz
-
t
d(on)
-
t
r
V
DD
=15 V,
V
GS
=10 V,
-
t
d(off)
I
D
=15 A,
R
G
=2.7
Ω
-
t
f
-
Gate Charge Characteristics+A40
6)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Q
gs
-
Q
g(th)
-
Q
gd
V
DD
=15 V,
I
D
=15 A,
-
Q
sw
V
GS
=0 to 5 V
-
Q
g
-
V
plateau
-
Gate charge total, sync. FET
Q
g(sync)
V
DS
=0.1 V,
V
GS
=0 to 5 V
-
Output charge
Q
oss
V
DD
=15 V,
V
GS
=0 V
-
1021
393
52
6.3
4.8
18
2.8
1358 pF
522
78
9.4 ns
7.2
27
4.2
3.4
4.5 nC
1.6
2.2
2.3
3.5
4.1
5.8
8.2
11
3.3
-V
7.2
9.6 nC
8.5
11
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
I
S
I
S,pulse
T
C
=25 °C
V
SD
V
GS
=0 V,
I
F
=30 A,
T
j
=25 °C
Q
rr
V
R
=15 V,
I
F
=
I
S
,
d
i
F
/d
t
=400 A/µs
-
-
30 A
-
-
210
-
0.93
1.2 V
-
-
10 nC
6)
See figure 16 for gate charge parameter definition
Rev. 1.3
page 3
2004-05-19
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]