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CGD1046HI,112

1 GHz, 27 dB gain GaAs high output power doubler

NXP Semiconductors. 

NXP Semiconductors

CGD1046HI

1 GHz, 27 dB gain GaAs high output power doubler

2. Pinning information

Table 2.

Pin

1

2, 3

5

7, 8

9

Pinning

Description

input

common

+VB

common

output

Simplified outline Graphic symbol

13579

5

1

9

23 78

sym095

3. Ordering information

Table 3. Ordering information

Type number Package

Name Description

CGD1046HI -

rectangular single-ended package; aluminium flange;

2 vertical mounting holes; 2 × 6-32 UNC and 2 extra

horizontal mounting holes; 7 gold-plated in-line leads

Version

SOT115J

4. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

VB

Vi(RF)

VESD

supply voltage

RF input voltage

electrostatic discharge voltage

single tone

Human Body Model (HBM);

According JEDEC standard

22-A114E

Biased; According

IEC61000-4-2

Tstg

storage temperature

Tmb

mounting base temperature

[1] The ESD pulse of 2000 V corresponds to a class 2 sensitivity level.

Min Max Unit

- 30 V

- 75 dBmV

[1] - 2000 V

- 1500 V

−40 +100 °C

−20 +100 °C

CGD1046HI

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 1 — 30 July 2010

© NXP B.V. 2010. All rights reserved.

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