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1PS66SB17 Datasheet PDF : 8 Pages
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Nexperia
1PSxSB17
4 V, 30 mA low Cd Schottky barrier diode
Table 6: Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Tj
junction temperature
-
Tamb ambient temperature
−65
Tstg
storage temperature
−65
Max
Unit
150
°C
+150 °C
+150 °C
6. Thermal characteristics
Table 7:
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to
ambient;
SOD323
SOD523
SOT666
Conditions
in free air
Min Typ Max Unit
[1]
[2] -
-
450 K/W
[3] -
-
450 K/W
[4] -
-
700 K/W
[1] For Schottky barrier diodes, thermal run-away has to be considered as in some applications the reverse
power losses PR are a significant part of the total power losses. Nomograms for determining the reverse
power losses PR and IF(AV) rating will be available on request.
[2] Refer to SOD323 (SC-76) standard mounting conditions.
[3] Refer to SOD523 (SC-79) standard mounting conditions.
[4] Refer to SOT666 standard mounting conditions.
7. Characteristics
Table 8: Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
VF
forward voltage see Figure 1;
IF = 0.1 mA
IF = 1 mA
IF = 10 mA
IR
reverse current VR = 3 V; see Figure 2
Cd
diode
see Figure 3;
capacitance
VR = 0 V; f = 1 MHz
VR = 0.5 V; f = 1 MHz
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Min
[1]
-
-
-
-
-
-
Typ
Max Unit
300
350
mV
360
450
mV
470
600
mV
-
250
nA
0.8
1
pF
0.65 -
pF
9397 750 14587
Product data sheet
Rev. 06 — 4 April 2005
© Nexperia B.V. 2017. All rights reserved
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