BTA212-600D Ver la hoja de datos (PDF) - NXP Semiconductors.
Número de pieza
componentes Descripción
Fabricante
BTA212-600D Datasheet PDF : 9 Pages
| |||
NXP Semiconductors
Three quadrant triacs
guaranteed commutation
Product specification
BTA212 series D, E and F
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
Rth j-mb
Rth j-a
Thermal resistance
full cycle
junction to mounting base half cycle
Thermal resistance
in free air
junction to ambient
MIN.
-
-
-
TYP.
-
-
60
MAX.
1.5
2.0
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
IGT
Gate trigger current2
IL
Latching current
IH
Holding current
VT
On-state voltage
VGT
Gate trigger voltage
ID
Off-state leakage current
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
dVD/dt
Critical rate of rise of
off-state voltage
dIcom/dt
Critical rate of change of
commutating current
dIcom/dt
Critical rate of change of
commutating current
CONDITIONS
BTA212-
VD = 12 V; IT = 0.1 A
T2+ G+
T2+ G-
T2- G-
VD = 12 V; IGT = 0.1 A
T2+ G+
T2+ G-
T2- G-
MIN.
MAX.
UNIT
...D ...E ...F
-
5
10
25 mA
-
5
10
25 mA
-
5
10
25 mA
-
15
20
25 mA
-
25
30
40 mA
-
25
30
40 mA
VD = 12 V; IGT = 0.1 A
-
15
25
30 mA
IT = 17 A
-
1.6
V
VD = 12 V; IT = 0.1 A
-
1.5
V
VD = 400 V; IT = 0.1 A;
0.25
-
V
Tj = 125 ˚C
VD = VDRM(max); Tj = 125 ˚C
-
0.5
mA
CONDITIONS
BTA212-
VDM = 67% VDRM(max);
Tj = 110 ˚C; exponential
waveform; gate open
circuit
VDM = 400 V; Tj = 125 ˚C;
IT(RMS) = 12 A;
dVcom/dt = 10 V/µs; gate
open circuit
VDM = 400 V; Tj = 125 ˚C;
IT(RMS) = 12 A;
dVcom/dt = 0.1 V/µs; gate
open circuit
...D
30
1.0
3.5
MIN.
...E
60
8
16
MAX. UNIT
...F
70
-
V/µs
21
- A/ms
32
- A/ms
2 Device does not trigger in the T2-, G+ quadrant.
June 2003
2
Rev 3.000
Share Link: 