DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

BTA212-600D Ver la hoja de datos (PDF) - NXP Semiconductors.

Número de pieza
componentes Descripción
Fabricante
BTA212-600D
NXP
NXP Semiconductors. NXP
BTA212-600D Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
NXP Semiconductors
Three quadrant triacs
guaranteed commutation
Product specification
BTA212 series D, E and F
GENERAL DESCRIPTION
Passivated guaranteed commutation triacs in
a plastic envelope intended for use in motor
control circuits or with other highly inductive
loads. These devices balance the
requirements of commutation performance
and gate sensitivity. The "sensitive gate" E
series and "logic level" D series are intended
for interfacing with low power drivers,
including micro controllers.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDRM
IT(RMS)
ITSM
BTA212-
BTA212-
BTA212-
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
PINNING - TO220AB
PIN
DESCRIPTION
1 main terminal 1
2 main terminal 2
3 gate
tab main terminal 2
PIN CONFIGURATION
tab
1 23
SYMBOL
T2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
VDRM
IT(RMS)
ITSM
I2t
dIT/dt
IGM
PGM
PG(AV)
Tstg
Tj
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
-
full sine wave;
-
Tmb 99 ˚C
full sine wave;
Tj = 25 ˚C prior to
surge
t = 20 ms
-
t = 16.7 ms
-
t = 10 ms
-
ITM = 20 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
-
-
over any 20 ms
-
period
-40
-
6001
12
95
105
45
100
2
5
0.5
150
125
MAX. UNIT
600D
600E
600F
600
V
12
A
95
A
T1
G
UNIT
V
A
A
A
A2s
A/µs
A
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
June 2003
1
Rev 3.000

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]