IHW30N160R2 Ver la hoja de datos (PDF) - Infineon Technologies

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componentes Descripción

Fabricante

IHW30N160R2

TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode

Infineon Technologies 

IHW30N160R2

Soft Switching Series

7.0mJ

6.0mJ

Eoff

5.0mJ

4.0mJ

3.0mJ

2.0mJ

1.0mJ

0.0mJ

0A

10A 20A 30A 40A 50A

IC, COLLECTOR CURRENT

Figure 13. Typical turn-off energy as a

function of collector current

(inductive load, TJ=175°C,

VCE=600V, VGE=0/15V, RG=10Ω,

Dynamic test circuit in Figure E)

Eoff

6.0mJ

5.0mJ

4.0mJ

10Ω 20Ω 30Ω 40Ω 50Ω 60Ω 70Ω 80Ω

RG, GATE RESISTOR

Figure 14. Typical turn-off energy as a

function of gate resistor

(inductive load, TJ=175°C, VCE=600V,

VGE=0/15V, IC=30A,

Dynamic test circuit in Figure E)

Eoff

4.0mJ

3.5mJ

3.0mJ

2.5mJ

2.0mJ

25°C 50°C 75°C 100°C 125°C 150°C

TJ, JUNCTION TEMPERATURE

Figure 15. Typical turn-off energy as a

function of junction temperature

(inductive load, VCE=600V,

VGE=0/15V, IC=30A, RG=10Ω,

Dynamic test circuit in Figure E)

7.5mJ

Eoff

7.0mJ

6.5mJ

6.0mJ

5.5mJ

5.0mJ

4.5mJ

4.0mJ

600V 700V 800V 900V 1000V 1100V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 16. Typical turn-off energy as a

function of collector emitter

voltage

(inductive load, TJ=175°C,

VGE=0/15V, IC=30A, RG=10Ω,

Dynamic test circuit in Figure E)

Power Semiconductors

7

Rev. 2.1 Nov 09

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