NCP160(2015) Ver la hoja de datos (PDF) - ON Semiconductor
Número de pieza
componentes Descripción
Fabricante
NCP160
(Rev.:2015)
(Rev.:2015)
ON Semiconductor
NCP160 Datasheet PDF : 20 Pages
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NCP160
ELECTRICAL CHARACTERISTICS −40°C ≤ TJ ≤ 125°C; VIN = VOUT(NOM) + 1 V; IOUT = 1 mA, CIN = COUT = 1 mF, unless otherwise
noted. VEN = 1.2 V. Typical values are at TJ = +25°C (Note 4).
Parameter
Test Conditions
Symbol
Min
Typ
Max Unit
Operating Input Voltage
Output Voltage Accuracy
Line Regulation
Load Regulation
Dropout Voltage (Note 5)
Output Current Limit
Short Circuit Current
Quiescent Current
Shutdown Current
EN Pin Threshold Voltage
EN Pull Down Current
Turn−On Time
Power Supply Rejection Ratio
VIN = VOUT(NOM) + 1 V
0 mA ≤ IOUT ≤ 250 mA
VOUT(NOM) + 1 V ≤ VIN ≤ 5.5 V
IOUT = 1 mA to 250 mA
VOUT(NOM) = 1.8 V
VOUT(NOM) = 2.5 V
VOUT(NOM) = 2.8 V
VOUT(NOM) = 2.85 V
IOUT = 250 mA
VOUT(NOM) = 3.0 V
VOUT(NOM) = 3.3 V
VOUT(NOM) = 3.5 V
VOUT(NOM) = 4.5 V
VOUT(NOM) = 5.0 V
VOUT(NOM) = 5.14 V
VOUT = 90% VOUT(NOM)
VOUT = 0 V
IOUT = 0 mA
VEN ≤ 0.4 V, VIN = 4.8 V
EN Input Voltage “H”
EN Input Voltage “L”
VEN = 4.8 V
COUT = 1 mF, From assertion of VEN to
VOUT = 95% VOUT(NOM)
IOUT = 20 mA
f = 100 Hz
f = 1 kHz
f = 10 kHz
f = 100 kHz
VIN
VOUT
LineReg
LoadReg
VDO
ICL
ISC
IQ
IDIS
VENH
VENL
IEN
PSRR
1.9
5.5
V
−2
+2
%
0.02
%/V
0.001
%/mA
180
250
110
175
95
160
95
160
90
155
mV
80
145
75
140
65
120
75
105
60
105
250
700
mA
690
18
23
mA
0.01
1
mA
1.2
V
0.4
0.2
0.5
mA
120
ms
91
98
82
dB
48
Output Voltage Noise
f = 10 Hz to 100 kHz
IOUT = 1 mA
IOUT = 250 mA
VN
14
10
mVRMS
Thermal Shutdown Threshold
Temperature rising
TSDH
160
°C
Temperature falling
TSDL
140
°C
Active Output Discharge Resistance
VEN < 0.4 V, Version A only
RDIS
280
W
Line Transient (Note 6)
VIN = (VOUT(NOM) + 1 V) to (VOUT(NOM) +
1.6 V) in 30 ms, IOUT = 1 mA
−1
VIN = (VOUT(NOM) + 1.6 V) to (VOUT(NOM) +
TranLINE
1 V) in 30 ms, IOUT = 1 mA
mV
+1
Load Transient (Note 6)
IOUT = 1 mA to 200 mA in 10 ms
IOUT = 200 mA to 1mA in 10 ms
−40
TranLOAD
mV
+40
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at TA = 25°C.
Low duty cycle pulse techniques are used during the testing to maintain the junction temperature as close to ambient as possible.
5. Dropout voltage is characterized when VOUT falls 100 mV below VOUT(NOM).
6. Guaranteed by design.
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