MBC13917EP Ver la hoja de datos (PDF) - Freescale Semiconductor

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MBC13917EP

General Purpose SiGe:C RF Cascode Low Noise Amplifier

Freescale Semiconductor 

Electrical Characteristics

Table 3. Device Level Characteristics (continued)

(Vcc = 2.7V, TA = 25°C, measured in S-parameter test fixture, unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Maximum Stable Gain and Maximum Available Gain

(Note1)

f= 350 MHz

f= 430 MHZ

34

36.4

—

MSG, MAG

33.2

35.6

—

f= 900 MHz

26.5

28.9

—

f= 1900 MHZ

15

17.6

—

Minimum Noise Figure

f= 350 MHz

—

1.0

1.35

f= 430 MHZ

f= 900 MHz

NFmin

—

—

0.95

1.30

0.95

1.30

f= 1900 MHz

—

1.5

1.85

Output Third Order Intercept

f= 350 MHz

7.7

9.7

—

f= 430 MHZ

OIP3

8.3

10.3

—

f= 900 MHz

11.3

13.3

—

f= 1900 MHz

11.6

13.6

—

Reverse Isolation

f= 350 MHz

-49

-53

—

f= 430 MHZ

S12

-48

-52

—

f= 900 MHz

-42

-46

—

f= 1900 MHz

-40

-44

—

Note: Maximum Available Gain and Maximum Stable Gain are defined by the K factor as follows:

if K>1, MAG=|S21/S12(K ±SqRt(K2-1)|

if K<1, MSG=|S21/S12|

dB

dB

dBm

dB

Table 4 lists the electrical characteristics measured on evaluation boards tuned for typical application

frequencies. Further details on the application circuits are shown in Section 4, “Application Circuits” and

details on the boards are shown in Section 5, “Printed Circuit Board and Bill of Materials.”

Table 4. Electrical Characteristics Measured in Frequency-Specific Tuned Circuits

(Vcc = 2.7V, TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

350 MHz (see Figure 16)

Supply Current

RF Gain

Icc

—

4.7

5.6

mA

G

26.6

27.7

—

dB

MBC13917 Advance Information, Rev. 1.0

4

Freescale Semiconductor

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