MBC13917EP Ver la hoja de datos (PDF) - Freescale Semiconductor

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MBC13917EP

General Purpose SiGe:C RF Cascode Low Noise Amplifier

Freescale Semiconductor 

Application Circuits

4.2 434 MHz Application

This application circuit was designed to provide NF = 2.3 dB, S21 gain > 27 dB for 434 MHz.

• Component C4 has the greatest impact on return losses, NF, and gain, by moving the input and

output on the Smith chart.

• Component L1 can be lowered to improve NF, by trading off S11 return loss.

• Gain, OIP3 and P1dBoutput can be increased, by decreasing the resistor at the output (without

impacting NF or return losses).

This application is intended for a range of designs, including TPMS, RKE, RF metering and key fob

designs using a battery.

Figure 17 is the 434 MHz application schematic with package pinouts and the circuit component topology.

Vc c

RF IN

C1

47 pF

L1

39 nH

1

2

Gnd

NC 3

Gnd

L2

6

33 nH

C2

100 pF

C3

.1uF

5

4 NC

R1

24 ohm

C4

2.4 pF

RF

OUT

Figure 17. 434 MHz Application Schematic

Typical performance that can be expected from this circuit at 2.7V is listed in Table 11.

Table 11. Typical 434 MHz Evaluation Board Performance

434 MHz

(Figure 17)

Vcc 2.7V

TA = 25°C

Characteristic

Symbol

Min

Supply Current

RF Gain

Icc

—

G

26

Noise Figure

NF

—

Output 3rd Order Intercept Point

OIP3

9.5

Power Output at 1 dB Gain Compression P1dBoutput

1

Input Return Loss

S11

—

Small Signal Gain

S21

26

Reverse Isolation

S12

—

Output Return Loss

S22

—

Typ

4.7

27

2.3

10.9

2.2

-15

27

-46

-19

Max

5.6

—

2.65

—

—

-10

—

-45

-16

Unit

mA

dB

dB

dBm

dBm

dB

dB

dB

dB

MBC13917 Advance Information, Rev. 1.0

Freescale Semiconductor

27

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