MBC13917EP Ver la hoja de datos (PDF) - Freescale Semiconductor

Número de pieza

componentes Descripción

Fabricante

MBC13917EP

General Purpose SiGe:C RF Cascode Low Noise Amplifier

Freescale Semiconductor 

Application Circuits

Table 10 provides the electrical characteristics for the 350 MHz–370 MHz application.

Table 10. Typical 350–370 MHz Evaluation Board Performance

Characteristic

Symbol

Min

Typ

Max

Unit

Supply Current

RF Gain

Icc

—

4.7

5.6

mA

G

26.6

27.7

—

dB

Noise Figure

NF

—

2.1

2.5

dB

350 MHz

Output 3rd Order Intercept Point

OIP3

8

9.5

—

dBm

(Figure 16)

Vcc 2.7V

Power Output at 1 dB Gain Compression P1dBoutput

-1

1

—

dBm

TA = 25°C

Input Return Loss

S11

—

-8

-7

dB

Small Signal Gain

S21

26

27

—

dB

Reverse Isolation

S12

—

-47

-46

dB

Output Return Loss

S22

—

-9

-7.5

dB

Supply Current

RF Gain

Icc

—

4.7

5.6

mA

G

27.5

28.6

—

dB

Noise Figure

NF

—

2.2

2.6

dB

370 MHz

Output 3rd Order Intercept Point

OIP3

9.2

10.7

—

dBm

(Figure 16)

Vcc 2.7V

Power Output at 1 dB Gain Compression P1dBoutput

0.7

2.2

—

dBm

TA = 25°C

Input Return Loss

S11

—

-12

-10

dB

Small Signal Gain

S21

27

28.5

—

dB

Reverse Isolation

S12

—

-47

-46

dB

Output Return Loss

S22

—

-12

-10

dB

350 MHz

(Figure 16)

Vcc 2.7V

TA = 85°C

Supply Current

RF Gain

Noise Figure

Output 3rd Order Intercept Point

Power Output at 1 dB Gain Compression

Input Return Loss

Small Signal Gain

Reverse Isolation

Output Return Loss

Icc

G

NF

OIP3

P1dBoutput

S11

S21

S12

S22

—

25.6

—

9.2

0

—

25.5

—

—

5.3

26.7

2.4

10.7

1.8

-8

26.6

-47.5

-9.7

6.2

—

2.75

—

—

-7

—

-46.5

-8

mA

dB

dB

dBm

dBm

dB

dB

dB

dB

MBC13917 Advance Information, Rev. 1.0

Freescale Semiconductor

25

Share Link: