IPI200N25N3G(2010) Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

IPI200N25N3G
(Rev.:2010)

OptiMOS™3 Power-Transistor

Infineon Technologies 

13 Avalanche characteristics

I AS=f(t AV); R GS=25 #

parameter: T j(start)

IPB200N25N3 G IPP200N25N3 G

IPI200N25N3 G

14 Typ. gate charge

V GS=f(Q gate); I D=25 A pulsed

parameter: V DD

10

8

200 V

6

125 V

50 V

4

2

15 Drain-source breakdown voltage

V BR(DSS)=f(T j); I D=1 mA

0

0

20

40

60

80

Qgate [nC]

16 Gate charge waveforms

290

280

270

260

250

240

230

220

-60 -20

20

60 100 140 180

Tj [°C]

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