IXGR50N90B2D1 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXGR50N90B2D1 Datasheet PDF : 6 Pages
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Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
gfs
IC
=
I
T
;
VCE
=
10
V,
Note
1,
2
Cies
Coes
Cres
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
Q
ge
IC =
I
T
,
VGE
=
15
V,
VCE
=
0.5
VCES
Q
gc
t
d(on)
t
ri
t
d(off)
tfi
Eoff
Inductive load
IC =
VCE
=IT,7V20GEV=,
15 V
RG =
Roff
=
5
Ω
Note 2
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 125°C
IC =
I,
T
VGE
=
15
V
VCE = 720 V, RG = Roff = 5 Ω,
Note 2
RthJC
RthCH
Diode
Symbol
Conditions
(TJ = 25°C unless otherwise specified )
VF
IF = 30 A; Note 1
TVJ = 150°C
IRM
trr
IVFR==IT1, 0d0iF/Vd;t
= -100
VGE = 0
A/μs;
V
TVJ
=
100°C
RthJC
RthCH
with heat transfer paste
Note 1: Pulse test, t ≤ 300 μs, duty cycle ≤ 2 %
Note 2: Test Current IT = 50A
Characteristic Values
Min. Typ. Max.
25
40
S
2500
pF
180
pF
75
pF
135
nC
23
nC
50
nC
20
ns
28
ns
350 500 ns
200
ns
4.7 7.5 mJ
20
ns
28
ns
1.5
mJ
400
ns
420
ns
8.7
mJ
1.25 K/W
0.21
K/W
IXGR 50N90B2D1
ISOPLUS247 Outline
Characteristic Values
Min. Typ. Max.
2.5 2.75 V
1.8
V
5.5 11.5 A
200
ns
1.1 K/W
0.25
K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by4,835,592 4,931,844 5,049,961 5,237,481 6,162,665
6,404,065 B1 6,683,344 6,727,585
one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343
6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505
6,710,463 6771478 B2
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