DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

MBR30H100CTG(2006) Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza
componentes Descripción
Fabricante
MBR30H100CTG
(Rev.:2006)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MBR30H100CTG Datasheet PDF : 6 Pages
1 2 3 4 5 6
MBR30H100CT
SWITCHMODE
Power Rectifier
100 V, 30 A
Features and Benefits
Low Forward Voltage: 0.67 V @ 125°C
Low Power Loss/High Efficiency
High Surge Capacity
175°C Operating Junction Temperature
30 A Total (15 A Per Diode Leg)
Pb−Free Package is Available
Applications
Power Supply − Output Rectification
Power Management
Instrumentation
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 1.9 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
ESD Rating: Human Body Model = 3B
Machine Model = C
MAXIMUM RATINGS
Please See the Table on the Following Page
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
30 AMPERES
100 VOLTS
1
2, 4
3
4
MARKING
DIAGRAM
1
2
3
TO−220AB
CASE 221A
PLASTIC
AYWW
B30H100G
AKA
A
= Assembly Location
Y
= Year
WW
= Work Week
B30H100 = Device Code
G
= Pb−Free Package
AKA = Polarity Designator
ORDERING INFORMATION
Device
Package
Shipping
MBR30H100CT
TO−220
50 Units/Rail
MBR30H100CTG TO−220
(Pb−Free)
50 Units/Rail
© Semiconductor Components Industries, LLC, 2006
1
July, 2006 − Rev. 2
Publication Order Number:
MBR30H100CT/D

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]