IPP06N03LA Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
IPP06N03LA Datasheet PDF : 10 Pages
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Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
SMD version, device on PCB
R thJC
R thJA
minimal footprint
6 cm2 cooling area4)
IPB06N03LA
IPI06N03LA, IPP06N03LA
min.
Values
typ.
Unit
max.
-
-
1.8 K/W
-
-
62
-
-
40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
25
-
Gate threshold voltage
V GS(th) V DS=V GS, I D=40 µA
1.2
1.6
Zero gate voltage drain current
I DSS
V DS=25 V, V GS=0 V,
T j=25 °C
-
0.1
-V
2
1 µA
V DS=25 V, V GS=0 V,
T j=125 °C
-
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
Drain-source on-state resistance
R DS(on) V GS=4.5 V, I D=30 A
-
V GS=4.5 V, I D=30 A,
-
SMD version
V GS=10 V, I D=30 A
-
V GS=10 V, I D=30 A,
-
SMD version
Gate resistance
RG
-
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=30 A
26
10
100
10
100 nA
7.9
9.9 mΩ
7.6
9.5
5.2
6.2
4.9
5.9
1.2
-Ω
52
-S
1) Current is limited by bondwire; with an R thJC=1.8 K/W the chip is able to carry 91 A.
2) See figure 3
3) T j,max=150 °C and duty cycle D <0.25 for V GS<-5 V
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.3
page 2
2003-12-18
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