MTM231232LBF Ver la hoja de datos (PDF) - Panasonic Corporation

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Fabricante

MTM231232LBF

Silicon P-channel MOSFET For Switching

Panasonic Corporation 

Doc No. TT4-EA-14177

Revision. 2

Product Standards

MOS FET

MTM231232LBF

 Electrical Characteristics Ta = 25 C  3 C

Parameter

Symbol

Conditions

Min Typ Max Unit

Drain-source Breakdown Voltage

VDSS ID = -1 mA, VGS = 0 V

-20

V

Zero Gate Voltage Drain Current

IDSS VDS = -20 V, VGS = 0 V

-1

A

Gate-source Leakage Current

IGSS VGS = 8 V, VDS = 0 V

10 A

Gate-source Threshold Voltage

Vth ID = -1 mA, VDS = -10 V

-0.4 -0.85 -1.3

V

Drain-source On-state Resistance *1

RDS(on)1 ID = -1 A, VGS = -4 V

RDS(on)2 ID = -0.5 A, VGS = -2.5 V

40 55

45 70

m

Forward transfer admittance *1

|Yfs| ID = -1 A, VDS = -10 V, f = 1 kHz 3.5

S

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Ciss

Coss

Crss

VDS = -10 V, VGS = 0 V

f = 1 MHz

1 000

120

pF

120

Turn-on Delay Time *2

Rise Time *2

Turn-off Delay Time *2

Fall Time *2

td(on)

tr

td(off)

tf

VDD = -10 V, VGS = 0 to -4 V

ID = -1 A

VDD = -10 V, VGS = -4 to 0 V

ID = -1 A

25

25

ns

120

70

ns

Note： Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.

*1 Pulse test : Pulse width  300 s, Duty cycle  2 %

*2 Measurement circuit for Turn-on Delay Time / Rise Time / Turn-off Delay Time / Fall Time

Established : 2012-04-21

Revised : 2013-03-07

Page 2 of 6

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