04N80C3(2008) Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
| 04N80C3 Datasheet PDF : 0 Pages | |||
Parameter
Dynamic characteristics
Symbol Conditions
SPA04N80C3
min.
Values
typ.
Unit
max.
Input capacitance
Output capacitance
C iss
V GS=0 V, V DS=100 V,
-
570
- pF
C oss
f =1 MHz
-
25
-
Effective output capacitance, energy
related6)
C o(er)
Effective output capacitance, time
related7)
C o(tr)
V GS=0 V, V DS=0 V
to 480 V
-
19
-
-
51
-
Turn-on delay time
Rise time
Turn-off delay time
Fall time
t d(on)
-
25
- ns
tr
V DD=400 V,
-
15
-
V GS=0/10 V, I D=4 A,
t d(off)
R G=22 ? , T j=25 °C
-
72
-
tf
-
12
-
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q gs
-
Q gd
V DD=640 V, I D=4 A,
-
Qg
V GS=0 to 10 V
-
V plateau
-
3
- nC
12
-
23
31
5.5
-V
Reverse Diode
Diode forward voltage
V SD
V GS=0 V, I F=I S=4 A,
T j=25 °C
-
1
1.2 V
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
t rr
-
520
- ns
Q rr
V R=400 V, I F=I S=4 A,
di F/dt =100 A/µs
-
4
- µC
I rrm
-
12
-A
1) J-STD20 and JESD22
2) Limited only by maximum temperature
3) Pulse width t p limited by T j,max
4) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.
5) ISD=ID, di/dt=400A/µs, VDClink = 400V, Vpeak<V(BR)DSS, Tj<Tjmax , identical low side and high side switch
6) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
7) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Rev. 2.9
page 3
2008-10-15
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