04N80C3(2008) Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
| 04N80C3 Datasheet PDF : 0 Pages | |||
9 Typ. gate charge
V GS=f(Q gate); I D=4 A pulsed
parameter: V DD
10
SPA04N80C3
10 Forward characteristics of reverse diode
I F=f(V SD); t p=10 µs
parameter: T j
102
8
160 V
25°C (98°C)
640 V
101
25 °C
6
150 °C
150°C (98%)
4
100
2
0
10-1
0
4
8
12
16
20
24
0
0.5
1
1.5
2
Q gate [nC]
V SD [V]
11 Avalanche energy
E AS=f(T j); I D=0.8 A; V DD=50 V
12 Drain-source breakdown voltage
V BR(DSS)=f(T j); I D=0.25 mA
960
180
920
150
880
120
840
90
800
60
760
30
720
0
25
50
75
100
125
150
T j [°C]
680
-60 -20 20
60 100 140 180
T j [°C]
Rev. 2.9
page 6
2008-10-15
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