04N80C3(2008) Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
| 04N80C3 Datasheet PDF : 0 Pages | |||
CoolMOSTM Power Transistor
Features
• New revolutionary high voltage technology
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
• Ultra low effective capacitances
• Fully isolated package (2500 VAC; 1 minute)
CoolMOSTM 800V designed for:
• Industrial application with high DC bulk voltage
• Switching Application ( i.e. active clamp forward )
Product Summary
V DS
R DS(on)max @ Tj = 25°C
Q g,typ
SPA04N80C3
800 V
1.3 Ω
23 nC
Type
SPA04N80C3
Package
PG-TO220-3
Marking
04N80C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current2)
ID
Pulsed drain current3)
I D,pulse
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
3),4)
AR
Avalanche
current,
repetitive
t
3),4)
AR
MOSFET dv /dt ruggedness
E AS
E AR
I AR
dv /dt
Gate source voltage
V GS
T C=25 °C
T C=100 °C
T C=25 °C
I D=0.8A, V DD=50 V
I D=4 A, V DD=50 V
V DS=0…640 V
static
AC (f >1 Hz)
Power dissipation
Operating and storage temperature
P tot
T C=25 °C
T j, T stg
Mounting torque
M2.5 screws
Rev. 2.9
page 1
Value
4
2.5
12
170
0.1
4
50
±20
±30
38
-55 ... 150
50
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
2008-10-15
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