ARF449B Ver la hoja de datos (PDF) - Microsemi Corporation
Número de pieza
componentes Descripción
Fabricante
ARF449B Datasheet PDF : 4 Pages
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G
RF POWER MOSFETs
N - CHANNEL ENHANCEMENT MODE
D
ARF449A(G)
ARF449B(G)
S
TO-247
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Common
Source
150V 90W 120MHz
The ARF449A and ARF449B comprise a symmetric pair of common source RF power transistors designed for push-
pull scientific, commercial, medical and industrial RF power amplifier applications up to 120 MHz.
• Specified 150 Volt, 81.36 MHz Characteristics: • Low Cost Common Source RF Package.
•
Output Power = 90 Watts.
• Very High Breakdown for Improved Ruggedness.
•
Gain = 13dB (Class C)
• Low Thermal Resistance.
•
Efficiency = 75%
• Nitride Passivated Die for Improved Reliability.
MAXIMUM RATINGS
Symbol Parameter
VDSS
VDGO
ID
VGS
PD
RθJC
TJ,TSTG
TL
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ TC = 25°C
Gate-Source Voltage
Total Power Dissipation @ TC = 25°C
Junction to Case
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
All Ratings: TC = 25°C unless otherwise specified.
ARF449A/449B(G) UNIT
450
Volts
450
9
Amps
±30
Volts
165
Watts
0.76
°C/W
-55 to 150
°C
300
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA)
450
VDS(ON) On State Drain Voltage 1 (ID(ON) = 5A, VGS = 10V)
IDSS
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
gfs
Forward Transconductance (VDS = 25V, ID = 5A)
3
VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 50mA)
2
4
25
250
±100
5.8
5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
Volts
µA
nA
mhos
Volts
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