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PACDN1404CG Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza
componentes Descripción
Fabricante
PACDN1404CG
ON-Semiconductor
ON Semiconductor ON-Semiconductor
PACDN1404CG Datasheet PDF : 5 Pages
1 2 3 4 5
PACDN1404
PACKAGE / PINOUT DIAGRAMS
Orientation
Marking
A
B
Top View
(Bumps Down View)
123
+
D14
Bottom View
(Bumps Up View)
B1 B2 B3
A1 A2 A3
PACDN1404
6Bump WLCSP Package
Orientation
Marking
1
A+
B
Top View
(Bumps Down View)
2345
DN1408
Bottom View
(Bumps Up View)
B1 B2 B3 B4 B5
A1 A2 A3 A4 A5
PACDN1408
10Bump WLCSP Package
SPECIFICATIONS
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameter
Rating
Units
Storage Temperature Range
65 to +150
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 2. STANDARD OPERATING CONDITIONS
Parameter
Operating Temperature Range
Rating
40 to +85
Units
C
Table 3. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Symbol
Parameter
Conditions
Min
Typ
Max
VREV
ILEAK
VSIG
Reverse Standoff Voltage
Leakage Current
Signal Clamp Voltage
Positive Clamp
Negative Clamp
IDIODE = 10 mA
VIN = 3.3 V DC
ILOAD = 10 mA
5.5
100
5.6
6.8
8.0
1.2 0.8 0.4
VESD
Insystem ESD Withstand Voltage
(Note 2)
a) Human Body Model, MILSTD883,
30
Method 3015
b) Contact Discharge per
25
IEC 6100042 Level 4
VCL
Clamping Voltage during ESD Discharge (Note 2)
MILSTD883 (Method 3015), 8 kV
Positive Transients
+12
Negative Transients
8
C
Channel Capacitance
At 2.5 V DC, f = 1 MHz
39
47
1. TA = 25C unless otherwise specified. GND in this document refers to the lower supply voltage.
2. ESD applied to channel pins with respect to GND, one at a time. All other channels are open. All GND pins tied to ground.
Units
V
nA
V
kV
V
pF
http://onsemi.com
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