STK551U3A2A-E Ver la hoja de datos (PDF) - ON Semiconductor
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STK551U3A2A-E Datasheet PDF : 15 Pages
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STK551U3A2A-E
Electrical Characteristics at Tc 25C, VD1, VD2, VD3, VD4 = 15 V
Parameter
Symbol
Conditions
Test
circuit min
Power output section
Collector-emitter cut-off
current
Bootstrap diode reverse
current
ICE
IR(BD)
VCE = 600 V
VR(BD)
-
Fig.1
-
Io = 20 A
Upper side
-
Collector to emitter saturation
voltage
VCE(SAT)
Tj = 25C
Io = 10 A
Lower side *1
Upper side
Fig.2
-
-
Tj = 100C Lower side *1
-
Diode forward voltage
Io = 20 A
Upper side
-
Tj = 25C
Lower side *1
-
VF
Io = 10 A
Upper side
Fig.3
-
Tj = 100C
Lower side *1
-
Junction to case
θj-c(T)
IGBT
-
thermal resistance
θj-c(D)
FRD
-
Control (Pre-driver) section
Pre-driver power dissipation
ID
VD1, 2, 3 = 15 V
VD4 = 15 V
High level Input voltage
Vin H
Low level Input voltage
Input threshold voltage
hysteresis*1
Logic 1 input leakage current
Logic 0 input leakage current
FAULT terminal input electric
current
FAULT clear time
Vin L
Vinth(hys)
IIN+
IIN-
IoSD
FLTCLR
HIN1, HIN2, HIN3,
LIN1, LIN2, LIN3 to VSS
VIN = +3.3 V
VIN = 0 V
FAULT : ON / VFAULT = 0.1 V
Fault output latch time.
VCC and VS undervoltage
positive going threshold.
VCC and VS undervoltage
negative going threshold.
VCC and VS undervoltage
hysteresis
Over current protection level
VCCUV+
VSUV+
VCCUV-
VSUV-
VCCUVH
VSUVH-
ISD
PW = 100 μs, RSD = 0 Ω
Output level for current monitor ISO
Io = 20 A
Thermistor for substrate
temperature
Rt
Thermistor Resistance
at 25C (Vth)
Reference voltage is “VSS” terminal voltage unless otherwise specified.
*1 : The lower side’s VCE(SAT) and VF include a loss by the shunt resistance
Fig.4
Fig.5
-
-
2.5
-
0.5
-
-
-
18
10.5
10.3
0.14
32.7
0.37
90
Ratings
typ
max
-
0.1
-
0.1
1.9
2.7
2.3
3.1
1.6
-
1.8
-
2.1
2.8
2.5
3.2
1.6
-
1.8
-
-
3.2
-
5
0.08
0.4
1.6
4
-
-
-
0.8
0.8
-
100
143
-
2
2
-
-
80
11.1
11.7
10.9
11.5
0.2
-
-
41.5
0.40
0.43
100
110
Unit
mA
mA
V
V
C/W
mA
V
V
V
A
A
mA
ms
V
V
A
A
V
kΩ
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