SIZ910DT-T1-GE3 Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
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Fabricante
SIZ910DT-T1-GE3 Datasheet PDF : 14 Pages
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New Product
SiZ910DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
VGS = 10 V thru 4 V
80
60
VGS = 3 V
20
16
12
TC = 25 °C
40
8
20
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.0032
4
0
0.0
5000
TC = 125 °C
TC = - 55 °C
0.5
1.0
1.5
2.0
2.5
3.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.0030
0.0028
VGS = 4.5 V
0.0026
0.0024
VGS = 10 V
0.0022
0.0020
0
20
40
60
80
100 120
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
ID = 20 A
8
VDS = 7.5 V
6
VDS = 15 V
4
VDS = 24 V
2
4000
Ciss
3000
2000
1000
Crss
Coss
0
0
5
10
15
20
25
30
VDS - Drain-to-Source Voltage (V)
Capacitance
1.8
ID = 20 A
1.6
1.4
VGS = 10 V, 4.5 V
1.2
1.0
0.8
0
0
10 20 30 40 50 60 70
Qg - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
www.vishay.com
Document Number: 63539
8
S11-2380-Rev. C, 28-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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