SIZ910DT-T1-GE3 Ver la hoja de datos (PDF) - Vishay Semiconductors
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SIZ910DT-T1-GE3 Datasheet PDF : 14 Pages
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New Product
SiZ910DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.016
0.014
ID = 20 A
10
TJ = 150 °C
0.012
0.010
0.008
1
TJ = 25 °C
0.006
TJ = 125 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
2.0
0.004
TJ = 25 °C
0.002
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
100
1.8
80
1.6
60
1.4
ID = 250 μA
40
1.2
20
1.0
0.8
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
1000
100
Limited by RDS(on)*
0
0.001
0.01 0.1
1
10
Time (s)
Single Pulse Power
100 μs
10
1 ms
1
10 ms
100 ms
1s
0.1 TA = 25 °C
Single Pulse
BVDSS Limited
10 s
DC
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
100 1000
Document Number: 63539
www.vishay.com
S11-2380-Rev. C, 28-Nov-11
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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