TC7MBL3253CFT(2009) Ver la hoja de datos (PDF) - Toshiba

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TC7MBL3253CFT
(Rev.:2009)

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

Toshiba 

Electrical Characteristics

DC Characteristics (Ta = −40~85°C)

TC7MBL3253CFT/FK/FTG

Parameter

Input voltage

( OE , S1, S0)

“H” level

“L” level

Input leakage current

( OE , S1, S0)

Power-off leakage current

Off-state leakage current

(switch off)

On resistance

(Note2)

Quiescent supply current

Symbol

VIH

VIL

Test Condition

⎯

⎯

Min Typ. Max Unit

VCC (V)

1.65 to 3.6

0.7 ×

VCC

⎯

⎯

V

1.65 to 3.6 ⎯

⎯

0.3 ×

VCC

IIN VIN = 0 to 3.6 V

1.65 to 3.6 ⎯

⎯

±1.0

μA

IOFF OE , S, A, B = 0 to 3.6 V

0

⎯

⎯

10

μA

ISZ A, B = 0 to VCC, OE = VCC

1.65 to 3.6 ⎯

⎯

±1.0

μA

RON

ICC

VIS = 0 V, IIS = 30 mA

(Note 1)

VIS = 3.0 V, IIS = 30 mA

(Note 1)

VIS = 2.4 V, IIS = 15 mA

(Note 1)

VIS = 0 V, IIS = 24 mA

(Note 1)

VIS = 2.3 V, IIS = 24 mA

(Note 1)

VIS = 2.0 V, IIS = 15 mA

(Note 1)

VIS = 0 V, IIS = 4 mA

(Note 1)

VIS = 1.65 V, IIS = 4 mA

(Note 1)

VIN = VCC or GND, IOUT = 0

3.0

3.0

3.0

2.3

2.3

2.3

1.65

1.65

3.6

⎯

9

13

⎯

18

24

⎯

20

28

⎯

10

15

Ω

⎯

23

32

⎯

25

35

⎯

12

18

⎯

29

40

⎯

⎯

10

μA

Note1: All typical values are at Ta=25°C.

Note2: Measured by the voltage drop between A and B pins at the indicated current through the switch.

On resistance is determined by the lower of the voltages on the two (A or B) pins

4

2009-02-02

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