STU8NM60ND Ver la hoja de datos (PDF) - STMicroelectronics

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componentes Descripción

Fabricante

STU8NM60ND

N-channel 600 V, 0.59 Ω , 7 A, FDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STx8NM60ND

(TCASE= 25 °C unless otherwise specified)

Table 5.

Symbol

On/off states

Parameter

Test conditions

Min. Typ. Max. Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1 mA, VGS = 0

dv/dt(1)

IDSS

IGSS

VGS(th)

RDS(on)

Drain-source voltage slope

Zero gate voltage drain

current (VGS = 0)

Gate body leakage current

(VDS = 0)

Gate threshold voltage

Static drain-source on

resistance

VDD = 480 V, ID = 7 A,

VGS =10 V

VDS = Max rating,

VDS = Max rating,Tc = 125 °C

VGS = ±20 V

VDS = VGS, ID = 250 µA

VGS = 10V, ID = 3.5 A

1. Characteristics value at turn off on inductive load

600

V

45

V/ns

1 µA

100 µA

±100 nA

3 4 5V

0.59 0.70 Ω

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

gfs(1) Forward transconductance VDS = 15 V, ID= 5 A

7.5

S

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

560

VDS = 50 V, f = 1 MHz, VGS = 0

37

4

pF

pF

pF

Coss

(2)

eq.

Equivalent output

capacitance

VGS = 0, VDS = 0 to 480 V

90

pF

f = 1 MHz Gate DC Bias = 0

RG Gate input resistance

Test Signal Level = 20 mV

Open Drain

6

Ω

Qg Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

VDD = 480 V, ID = 7 A

VGS = 10 V

Figure 19

22

nC

4

nC

13

nC

1. Pulsed: pulse duration = 300µs, duty cycle 1.5%

2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

4/17

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