74HC1G66-Q100 Ver la hoja de datos (PDF) - NXP Semiconductors.
Número de pieza
componentes Descripción
Fabricante
74HC1G66-Q100 Datasheet PDF : 19 Pages
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Nexperia
74HC1G66-Q100; 74HCT1G66-Q100
Single-pole single-throw analog switch
tW
VI 90 %
negative
pulse
VM
10 %
0V
tf
VI
positive
pulse
tr
90 %
VM
10 %
0V
tW
VM
tr
tf
VM
VI
G
VCC
VO
DUT
RT
VCC
RL S1
CL
open
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Test data is given in Table 11.
Definitions for test circuit:
RT = Termination resistance should be equal to output impedance Zo of the pulse generator.
CL = Load capacitance including jig and probe capacitance.
RL = Load resistance.
S1 = Test selection switch.
Fig 10. Test circuit for measuring switching times
Table 11. Test data
Type
Input
74HC1G66-Q100
74HCT1G66-Q100
VI
GND to VCC
GND to 3 V
tr, tf[1]
6 ns
6 ns
Load
CL
50 pF, 15 pF
50 pF, 15 pF
RL
1 k,
1 k,
[1] There is no constraint on tr, tf with a 50% duty factor when measuring fmax.
S1 position
tPHL, tPLH
open
open
tPZH, tPHZ
GND
GND
tPZL, tPLZ
VCC
VCC
11.2 Additional dynamic characteristics
Table 12. Additional dynamic characteristics for 74HC1G66-Q100 and 74HCT1G66-Q100
GND = 0 V; tr = tf = 6.0 ns; CL = 50 pF; unless otherwise specified. All typical values are measured at Tamb = 25 C.
Symbol Parameter
Conditions
Min Typ Max Unit
THD
total harmonic
distortion
fi = 1 kHz; RL = 10 k; see Figure 11
VCC = 4.5 V; VI = 4.0 V (p-p)
%
-
0.04 -
%
VCC = 9.0 V; VI = 8.0 V (p-p)
-
0.02 -
%
fi = 10 kHz; RL = 10 k; see Figure 11
VCC = 4.5 V; VI = 4.0 V (p-p)
-
0.12 -
%
VCC = 9.0 V; VI = 8.0 V (p-p)
-
0.06 -
%
74HC_HCT1G66_Q100
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 16 September 2013
© Nexperia B.V. 2017. All rights reserved
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