DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

VNQ5027AKTR-E(2009) Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza
componentes Descripción
Fabricante
VNQ5027AKTR-E Datasheet PDF : 31 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
VNQ5027AK-E
2
Electrical specifications
Electrical specifications
Figure 3. Current and voltage conventions
VCSD
ICSD
CS_DIS
VCC
OUTPUTn
IS
VFn
IOUTn
VOUTn
VCC
IINn
VINn
INPUTn
CURRENT
SENSEn
GND
IGND
ISENSEn
VSENSEn
Note:
2.1
VFn = VOUTn - VCC during reverse battery condition.
Absolute maximum ratings
Stressing the device above the ratings listed in the “Absolute maximum ratings” tables may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to the conditions in this section for extended
periods may affect device reliability. Refer also to the STMicroelectronics SURE Program
and other relevant quality documents.
Table 4.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
VCC DC supply voltage
41
V
-VCC Reverse DC supply voltage
0.3
V
- IGND DC reverse ground pin current
200
mA
IOUT DC output current
Internally limited A
- IOUT Reverse DC output current
24
A
IIN DC Input current
-1 to 10
mA
ICSD DC Current Sense disable Input current
-1 to 10
mA
-ICSENSE DC Reverse CS pin current
VCSENSE Current Sense maximum voltage
EMAX
Maximum switching energy (single pulse)
(L=0.8 mH; RL=0Ω; Vbat=13.5V; Tjstart=150ºC; IOUT = IlimL(Typ.))
200
mA
VCC-41
V
+VCC
V
140
mJ
Doc ID 12730 Rev 6
7/31

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]