VNQ5050KTR-E Ver la hoja de datos (PDF) - STMicroelectronics

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VNQ5050KTR-E

Quad channel high side driver for automotive applications

STMicroelectronics 

VNQ5050K-E

Electrical specifications

2.3

Electrical characteristics

Values specified in this section are for 8 V<VCC<36 V, -40 °C< Tj <150 °C, unless otherwise

stated.

Table 6.

Symbol

Power section

Parameter

Test conditions

Min. Typ. Max. Unit

VCC Operating supply voltage

VUSD Undervoltage shutdown

VUSDhyst

Undervoltage shutdown

hysteresis

4.5 13 36 V

3.5 4.5 V

0.5

V

RON On-state resistance(1)

IOUT=2A; Tj=25°C

IOUT=2A; Tj=150°C

IOUT=2A; VCC=5V; Tj=25°C

50 mΩ

100 mΩ

65 mΩ

Vclamp Clamp Voltage

IS=20 mA

41 46 52 V

IS Supply current

Off-state; VCC=13V;

VIN=VOUT=0V; Tj=25°C

On-state; VIN=5V; VCC=13V;

IOUT=0A

2(2) 5(2) μA

8 14 mA

IL(off1)

VIN=VOUT=0V; VCC=13V; Tj=25°C

Off-state output current(1) VIN=VOUT=0V; VCC=13V;

Tj=125°C

0

0

0.01

3

5

μA

μA

IL(off2) Off-state output current(1) VIN=0V; VOUT= 4V

-75

0 μA

VF

Output - VCC diode

voltage (1)

-IOUT=2A; Tj=150°C

0.7 V

1. For each channel.

2. PowerMOS leakage included

Table 7. Switching (VCC=13V; Tj=25°C)

Symbol

Parameter

Test conditions

td(on) Turn-on delay time

RL=6.5Ω

(see Figure 6)

td(off) Turn-off delay time

RL=6.5Ω

(see Figure 6)

dVOUT/dt(on) Turn-on voltage slope

RL=6.5Ω

(See Figure 16)

dVOUT/dt(off) Turn-off voltage slope

RL=6.5Ω

(See Figure 18)

WON

Switching energy

losses during twon

RL=6.5Ω

(see Figure 6)

WOFF

Switching energy

losses during twoff

RL=6.5Ω

(see Figure 6)

Min. Typ. Max. Unit

-

15

-

μs

-

40

-

μs

-

- V/μs

-

- V/μs

-

0.19 -

mJ

-

0.27 -

mJ

Doc ID 10864 Rev 7

9/31

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