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VNQ5050K-E(2005) Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza
componentes Descripción
Fabricante
VNQ5050K-E
(Rev.:2005)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
VNQ5050K-E Datasheet PDF : 13 Pages
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VNQ5050K-E
ELECTRICAL CHARACTERISTICS (8V<VCC<36V; -40°C< Tj <150°C, unless otherwise specified)
Table 6. Power Section
Symbol
Parameter
VCC
Operating supply voltage
VUSD
VUSDhyst
Undervoltage shut-down
Undervoltage shut-down
hysteresis
RON (**) On state resistance
Vclamp Clamp Voltage
IS
Supply current
IL(off1) (**) Off state output current
IL(off2) (**) Off state output current
Note: (**) Per each channel.
Note: 2. PowerMOS leakage included.
Test Conditions
IOUT=2A; Tj=25°C
IOUT=2A; Tj=150°C
IOUT=2A; VCC=5V; Tj=25°C
IS=20 mA
Off State; VCC=13V; VIN=VOUT=0V;
Tj=25°C
On State; VIN=5V; VCC=13V; IOUT=0A
VIN=VOUT=0V; VCC=13V; Tj=25°C
VIN=VOUT=0V; VCC=13V; Tj=125°C
VIN=0V; VOUT= 4V
Min. Typ. Max. Unit
4.5 13
36
V
3
4.5
V
0.5
V
50
m
100 m
65
m
41
46
52
V
2 (2) 5 (2)
µA
8
14
mA
0
3
µA
0
5
µA
-75
0
µA
Table 7. Switching (VCC=13V)
Symbol
Parameter
Test Conditions
td(on)
td(off)
dVOUT/dt(on)
dVOUT/dt(off)
WON
Turn-on Delay Time
Turn-off Delay Time
Turn-on Voltage Slope
Turn-off Voltage Slope
Switching energy
losses at turn-on
RL=6.5
RL=6.5
RL=6.5
RL=6.5
RL=6.5
WOFF
Switching energy
losses at turn-off
RL=6.5
Min.
Typ.
15
40
0.3
0.35
TBD
TBD
Max.
Unit
µs
µs
V/µs
V/µs
mJ
mJ
4/13

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