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VNQ5E160AKTR-E(2009) Ver la hoja de datos (PDF) - STMicroelectronics

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VNQ5E160AKTR-E Datasheet PDF : 37 Pages
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VNQ5E160AK-E
Electrical specifications
2.3
Electrical characteristics
Values specified in this section are for 8V<VCC<28V, -40°C< Tj <150°C, unless otherwise
stated.
Table 5.
Symbol
Power section
Parameter
Test conditions
Min. Typ. Max. Unit
VCC Operating supply voltage
VUSD Undervoltage shutdown
VUSDhyst
Undervoltage shutdown
hysteresis
4.5 13 28
V
3.5 4.5 V
0.5
V
RON On state resistance (2)
IOUT= 1A; Tj= 25°C
IOUT= 1A; Tj= 150°C
160
320 mΩ
IOUT= 1A; VCC= 5V; Tj= 25°C
210
Vclamp Clamp voltage
IS= 20 mA
41 46 52
V
IS Supply current
Off State; VCC= 13 V; Tj= 25°C;
VIN=VOUT=VSENSE=VCSD= 0 V
On State; VCC= 13V; VIN= 5 V;
IOUT= 0A
2 (1) 5(1)
µA
8 14 mA
IL(off1)
Off state output current (2)
VIN=VOUT= 0 V; VCC= 13 V;
Tj= 25°C
VIN=VOUT= 0 V; VCC= 13 V;
Tj= 125 °C
0 0.01 3
µA
0
5
VF
Output - VCC diode
voltage(2)
-IOUT=1A; Tj=150°C
0.7 V
1. PowerMOS leakage included.
2. For each channel.
Table 6. Switching (VCC = 13V; Tj = 25°C)
Symbol
Parameter
Test conditions Min.
Typ.
Max. Unit
td(on)
td(off)
Turn-on delay time
Turn-off delay time
RL= 13 Ω (see Figure 6.)
RL= 13 Ω (see Figure 6.)
(dVOUT/dt)on Turn-on voltage slope RL= 13 Ω
(dVOUT/dt)off Turn-off voltage slope RL= 13 Ω
WON
WOFF
Switching energy
losses during twon
Switching energy
losses during twoff
RL= 13 Ω (see Figure 6.)
RL= 13 Ω (see Figure 6.)
20
10
See
Figure 26.
See
Figure 28.
0.05
0.03
µs
µs
V/µs
V/µs
mJ
mJ
9/37

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