SI7135DP Ver la hoja de datos (PDF) - Vishay Semiconductors
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SI7135DP Datasheet PDF : 13 Pages
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Si7135DP
Vishay Siliconix
100
0.025
10
TJ = 150 °C
1
TJ = 25 °C
0.020
0.015
0.1
0.01
TJ = - 50 °C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.010
0.005
TJ = 125 °C
0.000
TJ = 25 °C
0 1 2 3 4 5 6 7 8 9 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.8
200
0.6
160
ID = 250 µA
0.4
ID = 1 mA
120
0.2
80
0.0
40
- 0.2
- 0.4
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
100
Limited by RDS(on)*
100 µs
1 ms
10
10 ms
1
0.1
TA = 25 °C
Single Pulse
BVDSS Limited
100 ms
1s
10 s
100 s, DC
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
S-81588-Rev. A, 07-Jul-08
4
Document Number: 68807
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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