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AUIRF7103Q

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International Rectifier 

AUIRF7103Q

Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient

RDS(on)

Static Drain-to-Source On-Resistance

VGS(th)

Gate Threshold Voltage

50 ––– –––

––– 0.057 –––

––– ––– 130

––– ––– 200

1.0 ––– 3.0

V VGS = 0V, ID = 250μA

V/°C Reference to 25°C, ID = 1mA

dd m

VGS = 10V, ID = 3.0A

VGS = 4.5V, ID = 1.5A

V VDS = VGS, ID = 250μA

gfs

Forward Transconductance

3.4 ––– ––– S VDS = 15V, ID = 3.0A

IDSS

Drain-to-Source Leakage Current

––– ––– 2.0

––– ––– 25

μA

VDS = 40V, VGS = 0V

VDS = 40V, VGS = 0V, TJ = 55°C

IGSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

–––

–––

––– -100

––– 100

nA

VGS = 20V

VGS = -20V

Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

Qg

Total Gate Charge

Qgs

Gate-to-Source Charge

––– 10 15

ID = 2.0A

––– 1.2 ––– nC VDS = 40V

Qgd

Gate-to-Drain ("Miller") Charge

––– 2.8 –––

VGS = 10V

td(on)

Turn-On Delay Time

––– 5.1 –––

VDD = 25V

tr

Rise Time

td(off)

Turn-Off Delay Time

tf

Fall Time

–––

–––

–––

1.7

15

2.3

–––

–––

–––

ns

ID = 1.0A

d RG = 6.0

RD = 25

Ciss

Input Capacitance

––– 255 –––

VGS = 0V

Coss

Output Capacitance

––– 69 ––– pF VDS = 25V

Crss

Reverse Transfer Capacitance

––– 29 –––

ƒ = 1.0MHz

Diode Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

Ù (Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

ton

Forward Turn-On Time

Min. Typ. Max. Units

Conditions

––– ––– 3.0

––– ––– 12

––– ––– 1.2

––– 35 53

––– 45 67

MOSFET symbol

D

A showing the

integral reverse G

d p-n junction diode.

S

V TJ = 25°C, IS = 1.5A, VGS = 0V

d ns TJ = 25°C,IF = 1.5A

nC di/dt = 100A/μs

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by max. junction temperature.

‚ Pulse width 400μs; duty cycle 2%.

ƒ Surface mounted on 1 in square Cu board.

„ Starting TJ = 25°C, L = 4.9mH, RG = 25, IAS = 3.0A. (See Figure 12).

… ISD  2.0A, di/dt  155A/μs, VDD V(BR)DSS, TJ  175°C.

† Limited by TJmax , see Fig.16c, 16d, 19, 20 for typical repetitive avalanche performance.

2

December 5, 2012

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