SS10P3CLHE3 Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
SS10P3CLHE3
Vishay Semiconductors
SS10P3CLHE3 Datasheet PDF : 5 Pages
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New Product
SS10P2CL & SS10P3CL
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
12
Resistive or Inductive Load
10
8
6
4
2
TL measured
at the Cathode Band Terminal
0
0
25
50
75 100 125 150 175
Lead Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
1000
100
10
1
TA = 150 °C
TA = 125 °C
0.1
0.01
TA = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics Per Diode
2.4
D = 0.3 D = 0.5 D = 0.8
D = 0.2
2.0
D = 0.1
1.6
D = 1.0
1.2
T
0.8
0.4
0
0
D = tp/T
tp
1
2
3
4
5
6
Average Forward Current (A)
Figure 2. Forward Power Loss Characteristics Per Diode
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance Per Diode
100
TA = 150 °C
10
TA = 125 °C
1
TA = 25 °C
0.1
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
100
10
Junction to Ambient
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Figure 6. Typical Transient Thermal Impedance Per Diode
Document Number: 89036 For technical questions within your region, please contact one of the following:
Revision: 30-Jul-08
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
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