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SD103BW Ver la hoja de datos (PDF) - Vishay Semiconductors

Número de pieza
componentes Descripción
Fabricante
SD103BW
Vishay
Vishay Semiconductors Vishay
SD103BW Datasheet PDF : 5 Pages
1 2 3 4 5
www.vishay.com
SD103AW, SD103BW, SD103CW
Vishay Semiconductors
Small Signal Schottky Diodes
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
MECHANICAL DATA
Case: SOD-123
Weight: approx. 10.3 mg
Cathode band color: black
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing, and coupling diodes for fast
switching and low logic level applications
• Other applications are click suppression,
efficient full wave bridges in telephone subsets,
and blocking diodes in rechargeable low voltage
battery systems
• The SD103 series is a metal-on-silicon Schottky barrier
device which is protected by a PN junction guardring
• For general purpose applications
• AEC-Q101 qualified available
• Base P/N-E3 - RoHS-compliant, commercial grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PARTS TABLE
PART
SD103AW
SD103BW
SD103CW
ORDERING CODE
SD103AW-E3-08 or SD103AW-E3-18
SD103AW-HE3-08 or SD103AW-HE3-18
SD103BW-E3-08 or SD103BW-E3-18
SD103BW-HE3-08 or SD103BW-HE3-18
SD103CW-E3-08 or SD103CW-E3-18
SD103CW-HE3-08 or SD103CW-HE3-18
CIRCUIT CONFIGURATION
Single
Single
Single
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
Repetitive peak reverse voltage
Forward continuous current (1)
Power dissipation (infinite heat sink) (1)
Single cycle surge
SD103AW
SD103BW
SD103CW
10 μs square wave
VRRM
VRRM
VRRM
IF
Ptot
IFSM
Note
(1) Valid provided that electrodes are kept at ambient temperature
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Thermal resistance junction to ambient air (1)
RthJA
Junction temperature
Tj
Operating temperature range
Top
Storage temperature range
Tstg
Note
(1) Valid provided that electrodes are kept at ambient temperature
TYPE
MARKING
S6
S7
S8
VALUE
40
30
20
350
400
2
VALUE
300
125
-55 to +125
-55 to +150
REMARKS
Tape and reel
UNIT
V
V
V
mA
mW
A
UNIT
K/W
°C
°C
°C
Rev. 1.7, 23-Feb-18
1
Document Number: 85681
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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