AT28C040-25BM Ver la hoja de datos (PDF) - Atmel Corporation

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AT28C040-25BM

4 Megabit (512K x 8) Paged CMOS E2PROM

Atmel Corporation 

AT28C040

Features

Fast Read Access Time - 150 ns

•• Automatic Page Write Operation

Internal Address and Data Latches for 256-Bytes

Internal Control Timer

• Fast Write Cycle Time

Page Write Cycle Time - 10 ms Maximum

1 to 256-Byte Page Write Operation

• Low Power Dissipation

80 mA Active Current

300 µA CMOS Standby Current

Hardware and Software Data Protection

• DATA Polling for End of Write Detection

•• High Reliability CMOS Technology

Endurance: 10,000 Cycles

Data Retention: 10 Years

• Single 5V ± 10% Supply

CMOS and TTL Compatible Inputs and Outputs

• JEDEC Approved Byte-Wide Pinout

•• Full Military, Commercial and Industrial Temperature Ranges

Description

The AT28C040 is a high-performance electrically erasable and programmable read

only memory (E2PROM). Its 4 megabits of memory is organized as 524,288 words by

8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device

offers access times to 150 ns with power dissipation of just 440 mW. When the device

is deselected, the CMOS standby current is less than 300 µA.

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Pin Configurations

Pin Name

A0 - A18

CE

OE

WE

I/O0 - I/O7

NC

Function

Addresses

Chip Enable

Output Enable

Write Enable

Data Inputs/Outputs

No Connect

4 Megabit

(512K x 8)

Paged

CMOS

E2PROM

Preliminary

AT28C040

LCC

Top View

SIDE BRAZE,

FLATPACK

Top View

0542A

2-255

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