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ISPXPLD5512MX Ver la hoja de datos (PDF) - Lattice Semiconductor

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ISPXPLD5512MX Datasheet PDF : 92 Pages
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Lattice Semiconductor
ispXPLD 5000MX Family Data Sheet
Absolute Maximum Ratings1, 2, 3
ispXPLD 5000MC
1.8V
ispXPLD 5000MB/V
2.5V/3.3V
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . -0.5 to 2.5V . . . . . . . . . . . . . . . . -0.5 to 5.5V
PLL Supply Voltage (VCCP) . . . . . . . . . . . . . . . . . . -0.5 to 2.5V . . . . . . . . . . . . . . . . -0.5 to 5.5V
Output Supply Voltage (VCCO) . . . . . . . . . . . . . . . . -0.5 to 4.5V . . . . . . . . . . . . . . . . -0.5 to 4.5V
IEEE 1149.1 TAP Supply Voltage (VCCJ) . . . . . . . . -0.5 to 4.5V . . . . . . . . . . . . . . . . -0.5 to 4.5V
Input Voltage Applied4, 5 . . . . . . . . . . . . . . . . . . . . . -0.5 to 5.5V . . . . . . . . . . . . . . . . -0.5 to 5.5V
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . -65 to 150°C . . . . . . . . . . . . . . . -65 to 150°C
Junction Temperature (TJ) with Power Applied . . . -55 to 150°C . . . . . . . . . . . . . . . -55 to 150°C
1. Stress above those listed under the “Absolute Maximum Ratings” may cause permanent damage to the device. Functional
operation of the device at these or any other conditions above those indicated in the operational sections of this specification
is not implied (while programming, following the programming specifications).
2. Compliance with the Lattice Thermal Management document is required.
3. All voltages referenced to GND.
4. Overshoot and Undershoot of -2V to (VIHMAX +2) volts not to exceed 6V is permitted for a duration of <20ns.
5. A maximum of 64 I/Os per device with VIN > 3.6V is allowed.
Recommended Operating Conditions
Symbol
VCC
VCCP
TJ
Parameter
Supply Voltage for 1.8V Devices (ispXPLD 5000MC)
Supply Voltage for 2.5V Devices (ispXPLD 5000MB)
Supply Voltage for 3.3V Devices (ispXPLD 5000MV)
PLL Block Supply Voltage for PLL 1.8V Devices
PLL Block Supply Voltage for PLL 2.5V Devices
PLL Block Supply Voltage for PLL 3.3V Devices
Junction Temperature (Commercial Operation)
Junction Temperature (Industrial Operation)
Min.
1.65
2.3
3
1.65
2.3
3
0
-40
Max.
1.95
2.7
3.6
1.95
2.7
3.6
90
105
Units
V
V
V
V
V
V
C
C
E2CMOS Erase Reprogram Specifications
Parameter
Erase/Reprogram Cycle1
1. Valid over commercial temperature range.
Min.
1,000
Max.
Units
Cycles
Hot Socketing Characteristics1, 2, 3, 4
Symbol
Parameter
Condition
Min.
Typ.
Max. Units
IDK
Input or I/O Leakage Current
0 VIN 3.0V
+/-50 +/-800
μA
1. Insensitive to sequence of VCC and VCCO when VCCO 1.0V. For VCCO > 1.0V, VCC min must be present. However, assumes monotonic
rise/fall rates for VCC and VCCO, provided (VIN - VCCO) 3.6V.
2. 0 VCC VCC (MAX), 0 VCCO VCCO (MAX)
3. IDK is additive to IPU, IPD or IBH. Device defaults to pull-up until non-volatile cells are active.
4. LVTTL, LVCMOS only.
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