BAS116LP3(2012) Ver la hoja de datos (PDF) - Diodes Incorporated.

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BAS116LP3
(Rev.:2012)

ULTRA-SMALL SURFACE MOUNT LOW LEAKAGE DIODE

Diodes Incorporated. 

BAS116LP3

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

85

V

VR

RMS Reverse Voltage

VR(RMS)

60

V

Forward Continuous Current (Note 4)

IFM

215

mA

Repetitive Peak Forward Current

IFRM

500

mA

Non-Repetitive Peak Forward Surge Current

@ t = 1.0μs

4.0

@ t = 1.0ms

IFSM

1.0

A

@ t = 1.0s

0.5

Thermal Characteristics

Characteristic

Power Dissipation (Note 4)

Thermal Resistance Junction to Ambient Air (Note 4)

Operating and Storage Temperature Range

Symbol

PD

RθJA

TJ, TSTG

Value

250

500

-65 to +150

Unit

mW

°C/W

°C

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Reverse Breakdown Voltage (Note 5)

Forward Voltage

Leakage Current (Note 5)

Total Capacitance

Reverse Recovery Time

Symbol Min

V(BR)R

85

VF

⎯

IR

⎯

CT

⎯

trr

⎯

Typ Max

⎯

⎯

0.75 0.95

0.9 1.10

1.0 1.20

1.15 1.35

10.0

⎯

100

500

1.6

3.0

120 3000

Unit

V

V

nA

pF

ns

Test Condition

IR = 100μA

IF = 1.0mA

IF = 10mA

IF = 50mA

IF = 150mA

VR = 75V

VR = 1V, TJ = 150°C

VR = 75V, TJ = 150°C

VR = 0, f = 1.0MHz

IF = IR = 10mA,

Irr = 0.1 x IR, RL = 100Ω

Notes:

4. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com.

5. Short duration pulse test used to minimize self-heating effect.

300

250

200

150

100

50

0

0

25 50 75 100 125 150

TA, AMBIENT TEMPERATURE (°C)

Fig. 1 Power Derating Curve, Total Package

0

0.4

0.8

1.2

1.6

VF, INSTANTANEOUS FORWARD VOLTAGE (V)

Fig. 2 Typical Forward Characteristics

BAS116LP3

Document number: DS35241 Rev. 5 - 2

2 of 4

www.diodes.com

January 2012

© Diodes Incorporated

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