STD16NF06LT4 Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Fabricante

STD16NF06LT4

N-channel 60V - 0.060Ω - 24A - DPAK/IPAK STripFET™ II Power MOSFET

STMicroelectronics 

STD16NF06L - STD16NF06L-1

Electrical characteristics

Table 5. Source drain diode

Symbol

Parameter

Test conditions

Min.

ISD

ISDM (1)

Source-drain current

Source-drain current

(pulsed)

VSD (2) Forward on voltage

ISD = 16A, VGS = 0

trr

Qrr

IRRM

Reverse recovery time ISD = 16A, di/dt = 100A/µs,

Reverse recovery charge VDD = 25V, Tj = 150°C

Reverse recovery current (see Figure 15)

1. Pulse width limited by safe operating area.

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Typ.

53

85

3.2

Max. Unit

16

A

64

A

1.5 V

ns

µC

A

5/14

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