STP7N65M2 Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Fabricante

STP7N65M2

N-channel 650 V, 0.98 Ω typ., 5 A MDmesh™ M2 Power MOSFETs in TO-220 and IPAK packages

STMicroelectronics 

STP7N65M2, STU7N65M2

Symbol

Parameter

ISD

ISDM(1)

VSD(2)

trr

Source-drain current

Source-drain current

(pulsed)

Forward on voltage

Reverse recovery

time

Qrr

Reverse recovery

charge

IRRM

Reverse recovery

current

trr

Reverse recovery

time

Qrr

Reverse recovery

charge

IRRM

Reverse recovery

current

Table 8: Source drain diode

Test conditions

ISD = 5 A, VGS = 0

ISD = 5 A, di/dt = 100 A/µs

VDD = 60 V (see Figure 21:

"Switching time waveform")

ISD = 5 A, di/dt = 100 A/µs

VDD = 60 V, Tj = 150 °C

(see Figure 21: "Switching time

waveform")

Notes:

(1)Pulse width limited by safe operating area.

(2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Electrical characteristics

Min. Typ. Max. Unit

-

5

A

-

20 A

-

1.6 V

- 275

ns

- 1.62

µC

- 11.8

A

- 430

ns

- 2.54

µC

- 11.9

A

DocID026788 Rev 3

5/18

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