STP7N65M2 Ver la hoja de datos (PDF) - STMicroelectronics

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Fabricante

STP7N65M2

N-channel 650 V, 0.98 Ω typ., 5 A MDmesh™ M2 Power MOSFETs in TO-220 and IPAK packages

STMicroelectronics 

STP7N65M2, STU7N65M2

Electrical ratings

1

Electrical ratings

Symbol

Table 2: Absolute maximum ratings

Parameter

Value

Unit

VGS

ID

ID

IDM(1)

PTOT

dv/dt (2)

dv/dt (3)

Tstg

Tj

Gate-source voltage

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

Drain current (pulsed)

Total dissipation at TC = 25 °C

Peak diode recovery voltage slope

MOSFET dv/dt ruggedness

Storage temperature

Operating junction temperature

± 25

5

3.2

20

60

15

50

- 55 to 150

V

A

A

A

W

V/ns

°C

Notes:

(1)Pulse width limited by safe operating area

(2)ISD ≤ 5 A, di/dt ≤ 400 A/µs; VDSpeak < V(BR)DSS, VDD=400 V

(3)VDS ≤ 520 V

Table 3: Thermal data

Symbol

Parameter

Rthj-case

Rthj-amb

Thermal resistance junction-case max

Thermal resistance junction-ambient max

Value

TO-220 IPAK

2.08

62.5

100

Unit

°C/W

°C/W

Symbol

IAR

EAS

Table 4: Avalanche characteristics

Parameter

Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax )

Single pulse avalanche energy (starting Tj=25°C, ID= IAR; VDD=50 V)

Value Unit

1

A

103 mJ

DocID026788 Rev 3

3/18

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