STD7N65M2 Ver la hoja de datos (PDF) - STMicroelectronics

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STD7N65M2

N-channel 650 V, 0.98 Ω typ., 5 A MDmesh™ M2 Power MOSFET in a DPAK package

STMicroelectronics 

STD7N65M2

Electrical characteristics

Table 8. Source drain diode

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

ISD

ISDM (1)

VSD (2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

ISD = 5 A, VGS = 0

-

5A

-

20 A

-

1.6 V

trr

Reverse recovery time

- 275

ns

Qrr Reverse recovery charge

ISD = 5 A, di/dt = 100 A/µs

VDD = 60 V (see Figure 19)

-

1.62

µC

IRRM Reverse recovery current

- 11.8

A

trr

Reverse recovery time

ISD = 5 A, di/dt = 100 A/µs

- 430

ns

Qrr Reverse recovery charge

VDD = 60 V, Tj = 150 °C

- 2.54

µC

IRRM Reverse recovery current

(see Figure 19)

- 11.9

A

1. Pulse width limited by safe operating area.

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

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