STD7N65M2
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VGS
ID
ID
IDM(1)
PTOT
dv/dt (2)
dv/dt(3)
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Tstg
Storage temperature
Tj
Operating junction temperature
1. Pulse width limited by safe operating area
2. ISD ≤ 5 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD=400 V
3. VDS ≤ 520 V
Symbol
Table 3. Thermal data
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-pcb Thermal resistance junction-pcb max
1. When mounted on 1 inch² FR-4, 2 Oz copper board.
Table 4. Avalanche characteristics
Symbol
Parameter
IAR
Avalanche current, repetitive or not repetitive (pulse width
limited by Tjmax )
EAS
Single pulse avalanche energy (starting Tj=25°C, ID= IAR;
VDD=50 V)
Value
± 25
5
3.2
20
60
15
50
- 55 to 150
Unit
V
A
A
A
W
V/ns
°C
Value
2.08
50(1)
Unit
°C/W
°C/W
Value
Unit
1
A
103
mJ
DocID026787 Rev 2
3/17
17