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STD7N65M2

N-channel 650 V, 0.98 Ω typ., 5 A MDmesh™ M2 Power MOSFET in a DPAK package

STMicroelectronics 

STD7N65M2

N-channel 650 V, 0.98 Ω typ., 5 A MDmesh™ M2

Power MOSFET in a DPAK package

Datasheet - production data

Features

TAB

3

1

DPAK

Figure 1. Internal schematic diagram

D(2, TAB)

G(1)

Order code

STD7N65M2

VDS

RDS(on)

max

ID

650 V 1.15 Ω

5A

• Extremely low gate charge

• Excellent output capacitance (Coss) profile

• 100% avalanche tested

• Zener-protected

Applications

• Switching applications

Description

This device is an N-channel Power MOSFET

developed using the MDmesh™ M2 technology.

Thanks to the strip layout associated to an

improved vertical structure, the device exhibits

both low on-resistance and optimized switching

characteristics. It is therefore suitable for the most

demanding high efficiency converters.

S(3)

AM15572v1

Order code

STD7N65M2

Table 1. Device summary

Marking

Package

7N65M2

DPAK

Packaging

Tape and reel

May 2015

This is information on a product in full production.

DocID026787 Rev 2

1/17

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