3N80K5 Ver la hoja de datos (PDF) - STMicroelectronics

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3N80K5

N-channel 800 V, 2.8 Ω typ., 2.5 A MDmesh™ K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK

STMicroelectronics 

STD3N80K5, STF3N80K5,

STP3N80K5, STU3N80K5

N-channel 800 V, 2.8 Ω typ., 2.5 A MDmesh™ K5

Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code VDS

STD3N80K5

STF3N80K5

STP3N80K5

STU3N80K5

800 V

RDS(on) max.

3.5 Ω

ID

2.5 A

PTOT

60 W

20 W

60 W

 Industry’s lowest RDS(on) x area

 Industry’s best FoM (figure of merit)

 Ultra-low gate charge

 100% avalanche tested

 Zener-protected

Applications

 Switching applications

Description

These very high voltage N-channel Power

MOSFETs are designed using MDmesh™ K5

technology based on an innovative proprietary

vertical structure. The result is a dramatic

reduction in on-resistance and ultra-low gate

charge for applications requiring superior power

density and high efficiency.

Order code

STD3N80K5

STF3N80K5

STP3N80K5

STU3N80K5

Table 1: Device summary

Marking

Package

DPAK

3N80K5

TO-220FP

TO-220

IPAK

Packing

Tape and reel

Tube

July 2017

DocID025000 Rev 4

This is information on a product in full production.

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