SI4425DDY Ver la hoja de datos (PDF) - Vishay Semiconductors
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SI4425DDY Datasheet PDF : 9 Pages
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Si4425DDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.04
10
TJ = 150 °C
TJ = 25 °C
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
2.2
0.03
0.02
TJ = 125 °C
0.01
TJ = 25 °C
0.00
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
100
80
1.9
60
1.6
ID = 250 µA
40
1.3
20
1.0
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power (Junction-to-Ambient)
100
Limited by RDS(on)*
100 µA
10
1
0.1
TA = 25 °C
Single Pulse
BVDSS Limited
1 ms
10 ms
100 ms
1s
10 s
DC
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 64732
S09-0314-Rev. A, 02-Mar-09
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