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Fabricante

SI4425DDY

P-Channel 30-V (D-S) MOSFET

Vishay Semiconductors 

P-Channel 30-V (D-S) MOSFET

Si4425DDY

Vishay Siliconix

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

0.0098 at VGS = 10 V

- 30

0.0165 at VGS = 4.5 V

ID (A)a

- 19.7

- 15.2

Qg (Typ.)

27 nC

S1

S2

S3

G4

SO-8

8D

7D

6D

5D

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET® Power MOSFET

• 100 % Rg Tested

APPLICATIONS

• Load Switches

- Notebook PCs

- Desktop PCs

S

G

Top View

Ordering Information: Si4425DDY-T1-GE3 (Lead (Pb)-free and Halogen-free)

D

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

VDS

- 30

V

VGS

± 20

TC = 25 °C

- 19.7

Continuous Drain Current (TJ = 150 °C)

TC = 70 °C

TA = 25 °C

ID

- 15.7

- 13b, c

TA = 70 °C

- 10.4b, c

A

Pulsed Drain Current

IDM

- 50

Continous Source-Drain Diode Current

TC = 25 °C

TA = 25 °C

IS

- 4.7

- 2.1b, c

TC = 25 °C

5.7

Maximum Power Dissipation

TC = 70 °C

TA = 25 °C

PD

3.6

2.5b, c

W

TA = 70 °C

1.6b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambientb, d

Maximum Junction-to-Foot (Drain)

t ≤ 10 s

Steady State

Notes:

a. Based on TC = 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under Steady State conditions is 85 °C/W.

Symbol

RthJA

RthJF

Typical

35

18

Maximum

50

22

Unit

°C/W

Document Number: 64732

S09-0314-Rev. A, 02-Mar-09

www.vishay.com

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